Home Free Space Laser Diodes Single Mode Laser Diodes Gain chip for 950-1100nm tuning range, 200mW @ 1030nm, QGC-1030-160-200

Gain chip for 950-1100nm tuning range, 200mW @ 1030nm, QGC-1030-160-200

Gain chip for 950-1100nm tuning range, 200mW @ 1030nm, QGC-1030-160-200
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    • Designed for external cavity tunable laser
    • Optimized for wavelength locked operation
    • High Signal / ASE ratio
    • Low beam ellipticity

     

    Gain chip has curved stripe with HR-coating on the back facet and deep AR-coating on the tilted front side.  The curved stripe along with deep AR-coating provide extremely low reflection (< 10E-5) resulting in suppression of self lasing and minimizing of gain ripples.

     

     Email or call us for price and better estimation of lead time.

Details
Lead time 7 weeks ARO
 
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Specifications

RECOMMENDED OPERATING POINT
Parameter Min Typ Max Unit
Current   400 500* mA
Forward voltage    1.7 1.9 V
Heatsink temperature  20 25 30 deg. C

*No self-lasing up to maximum current

TUNABILITY (@ CW, recommended operating point, external cavity in Littman configuration, ≈10% feedback)
Parameters Min Typ Max Unit
Wavelength of maximum power (λMP) 1065 1080 1095  
Optical output power @ λMP 150 220   mW
Central wavelength of tuning range 1015 1030 1045 nm
Tuning range width   160   nm

 

AMPLIFIED SPONTANEOUS EMISSION (@ CW, recommended operating point, without external cavity)
Parameter Min Typ Max Unit
Optical power   50   mW
Mean wavelength   980   nm
Bandwidth @ -3dB*   20   nm
Fast axis beam divergence @ -3dB 15 17 20 deg.
Slow axis beam divergence @ -3dB 4 8 10 deg.

* Radiation coupled in single-mode fiber without lens and measured by OSA with 1 nm resolution.

CHIP PARAMETERS
Parameter Min Typ Max Unit
Chip length   1.5   mm
Back-reflection from back facet (HR-coated) 99     %
Back-reflection from front facet (AR-coated)     0.001 %

 

ABSOLUTE MAXIMUM RATINGS
Parameters Min Max Unit
Diode reverse voltage   1 V
Forward current   600 mA
Storage temperature (in original hermetically sealed package) 5 50 °C
Heatsink operating temperature 20 40 °C

CHIP VISUAL ACCEPTANCE CRITERIA
Top view:               no indentations deeper 30um on cleaved edges, no scratches or indentations on mesa
Front facet view:   no particles or defects of coating in 10-um area around mesa

Spectrum

TYPICAL PERFORMANCE WITHOUT FEEDBACK
@ CW, 25°C heatsink temperature

 

TYPICAL PERFORMANCE IN EXTERNAL CAVITY (EC)
@ CW, 25°C heatsink temperature, Littman configuration with ≈10% feedback

Pin Configuration

Unit in mm

Additional information

The laser light emitted from this device is invisible and can be dangerous to the human eye. Avoid looking directly into the fiber output or into the collimated beam along its optical axis when the device is in operation. Proper laser safety eyewear must be worn during operation.

Absolute Maximum Ratings may be applied to the device for short period of time only. Exposure to maximum ratings for extended period of time or exposure above one or more max ratings may cause damage or affect the reliability of the device. Operating the product outside of its maximum ratings may cause device failure or a safety hazard.

Power supplies used with the device must be employed such that the maximum peak optical power cannot be exceeded. A proper heatsink for the device on thermal radiator is required, sufficient heat dissipation and thermal conductance to the heatsink must be ensured. The device is an open-heatsink laser diode; it may be operated in cleanroom atmosphere or dust-protected housing only. Operating temperature and relative humidity must be controlled to avoid water condensation on the laser facets. Any contamination or contact of the laser facet must be avoided.

ESD PROTECTION – Electrostatic discharge is the primary cause of unexpected product failure. Take extreme precaution to prevent ESD. Use wrist straps, grounded work surfaces and rigorous antistatic techniques when handling the product.

 

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